Fernando Guarín, IEEE Fellow, Distinguished Member of technical Staff, GlobalFoundries East Fishkill, NY. USA
Date: January 15, 2020 | 15:00 – 16:00
Venue: Room LT2, 4th floor, North Tower, IST, Lisbon
Up to this point in the evolution of leading edge Silicon CMOS technologies the qualification of the latest nodes has been carried out using the methods and targets dictated by digital/logic applications. For RF applications the digital centric methodology and metrics will no longer be applicable. We will discuss the reliability impact and the qualification activities driven by the need to support reliable operation for RF circuit applications. The CMOS solutions for RF applications include the introduction of SOI that may introduce additional reliability considerations. The path to maintaining the advanced CMOS scaling cadence and new reliability limiting factors will be examined from the reliability perspective. We will also review the reliability requirements for RF reliability devices and applications as we prepare to introduce technologies to serve the 5G infrastructure requirements. A closer look will be given to Hot Carriers. The characterization, models and qualification methodologies will be put in the required perspective for the successful qualification and transfer of leading edge technologies to a manufacturing environment.
Dr. Fernando Guarín is a Distinguished Member of Technical Staff at Global Foundries in East Fishkill New York. He retired from IBM’s SRDC after 27 years as Senior Member of Technical Staff. He earned his BSEE from the “Pontificia Universidad Javeriana”, in Bogotá, Colombia, the M.S.E.E. degree from the University of Arizona, and the Ph.D. in Electrical Engineering from Columbia University, NY He has been actively working in microelectronic reliability for over 35 years. From 1980 until 1988 he worked in the Military and Aerospace Operations division of National Semiconductor Corporation. In 1988 he joined IBM’s microelectronics division where he worked in the reliability physics and modeling of Advanced Bipolar, CMOS and Silicon Germanium BiCMOS technologies. He is currently leading the team qualifying GlobalFoundries RF 5G technology offerings. Dr. Guarín is an IEEE Fellow, Distinguished Lecturer for the IEEE Electron Device Society EDS, where he has served in many capacities including; member of the IEEE’s EDS Board of governors, chair of the EDS Education Committee, Secretary for EDS. He was the EDS President 2018-2019.