Cristiano Ferreira Gonçalves

Cristiano Gonçalves

Former IT academic position:	External Author
Joining/Leaving IT dates:	02-01-2016 / 01-12-2021
Roles held in IT:	PhD Student
Former IT thematic line:	Wireless Technologies
Group:	Wireless Circuits – Av

Scientific Achievements

Publications

6Papers in Journals

C. Gonçalves, F. M. B. Barradas, L. C. Nunes, P. M. Cabral, J. C. Pedro, Quasi-Load Insensitive Doherty PA Using Supply Voltage and Input Excitation Adaptation, IEEE Transactions on Microwave Theory and Techniques, Vol. 70, No. 1, pp. 779 - 789, January, 2022 | Full text (PDF 3 MBs) | BibTex
C. Gonçalves, F. M. B. Barradas, L. C. Nunes, P. M. Cabral, J. C. Pedro, A Compact Impedance Measurement Solution for Systems Operating in Load Varying Scenarios, IEEE Access, Vol. 9, No. -, pp. 38757 - 38766, March, 2021 | Full text (PDF 1 MB) | BibTex
C. Gonçalves, F. M. B. Barradas, L. C. Nunes, P. M. Cabral, J. C. Pedro, Dynamic Supply Voltage Control for PA Output Power Correction Under Variable Loading Scenarios, IEEE Transactions on Microwave Theory and Techniques, Vol. 69, No. 1, pp. 745 - 755, January, 2021 | Full text (PDF 3 MBs) | BibTex
C. Gonçalves, F. M. B. Barradas, P. M. Cabral, J. C. Pedro, Switch-Based Variable Length Stubs Network for PA Load Sensitivity Reduction, IEEE Access, Vol. 7, No. -, pp. 152576 - 152584, October, 2019,
| Abstract | Full text (PDF 1 MB) | BibTex
J. Gomes, L. C. Nunes, C. Gonçalves, J. C. Pedro, An Accurate Characterization of Capture Time Constants in GaN HEMTs, IEEE Transactions on Microwave Theory and Techniques, Vol. 67, No. 7, pp. 2465 - 2474, July, 2019 | BibTex
C. Gonçalves, L. C. Nunes, P. M. Cabral, J. C. Pedro, Pulsed I/V and S-parameters measurement system for isodynamic characterization of power GaN HEMT transistors, Intrnl. Journal of RF and Microwave Computer-Aided Engineering, Vol. 28, No. 8, pp. e21515 - e21515, August, 2018 | BibTex

3Papers in Conferences

C. Gonçalves, F. M. B. Barradas, L. C. Nunes, P. M. Cabral, J. C. Pedro, Optimal Supply Voltage for PA Output Power Correction under Load Varying Scenarios, IEEE International Microwave Symposium IMS, Los Angeles, United States, June, 2020 | BibTex
J. Gomes, L. C. Nunes, C. Gonçalves, J. C. Pedro, Deep-Level Traps’ Capture Time Constant and its Impact on Nonlinear GaN HEMT Modeling, International Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits - INMMIC, Brive-la-Gaillarde, France, July, 2018 | BibTex
C. Gonçalves, P. M. Cabral, L. C. Nunes, J. C. Pedro, Conservative Current and Charge Data Extracted from Pulsed S-Parameter Measurements for GaN HEMT PA Design, IEEE International Symp. on Microwave Theory and Tech., Hawaii, United States, June, 2017 | BibTex

Other Scientific Achievements

1Awards

C. Gonçalves, D. Barros, J. Pereira, 1st Place on "EuMW Student Design Competition - Video Bandwidth Enhancement for High Power Amplifiers", European Microwave Week 2018 - Student Design Competition - Thrust 2 Video Bandwidth Enhancement for High Power Amplifiers sponsored by Ampleon Netherlands B.V., 01-09-2018

1Short Courses and Seminars

L. C. Nunes, F. M. B. Barradas, C. Gonçalves, J. Gomes, P. M. Tomé, T.R. Cunha, P. M. Cabral, J. C. Pedro, Long-Term Memory Effects in GaN Devices: From Modeling to Compensation, Spain, 09-2018

IT Alumni Profile

Cristiano Gonçalves

Scientific Achievements