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C. Gonçalves,
L. C. Nunes,
P. M. Cabral,
J. C. Pedro,
Pulsed I/V and S-parameters measurement system for isodynamic characterization of power GaN HEMT transistors,
Intrnl. Journal of RF and Microwave Computer-Aided Engineering,
Vol. 28,
No. 8,
pp. e21515 - e21515,
August,
2018
| BibTex
J. Gomes,
L. C. Nunes,
C. Gonçalves,
J. C. Pedro,
Deep-Level Traps’ Capture Time Constant and its Impact on Nonlinear GaN HEMT Modeling,
International Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits - INMMIC,
Brive-la-Gaillarde,
France,
Vol.,
pp. -,
July,
2018
| BibTex
C. Gonçalves,
P. M. Cabral,
L. C. Nunes,
J. C. Pedro,
Conservative Current and Charge Data Extracted from Pulsed S-Parameter Measurements for GaN HEMT PA Design,
IEEE International Symp. on Microwave Theory and Tech.,
Hawaii,
United States,
Vol.,
pp. -,
June,
2017
| BibTex
C. Gonçalves,
D. Barros,
J. Pereira,
1st Place on "EuMW Student Design Competition - Video Bandwidth Enhancement for High Power Amplifiers",
European Microwave Week 2018 - Student Design Competition - Thrust 2
Video Bandwidth Enhancement for High Power Amplifiers sponsored by Ampleon Netherlands B.V.,
01-09-2018