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Note: This is a free translation of the original announcement written in Portuguese, provided only for convenience of non-Portuguese speakers. Only the Portuguese version has official value.
Post-Doctoral Fellowship on GaN HEMT Modeling and RF Power Amplifier Design – BPD Nº/2020/00142
Funding Reference Number:
BPD Nº/2020/00142- Joint-Lab
The project is devoted to electron device modeling for RF power amplifiers (especially GaN HEMTs) and their applications on power amplifier design. Specifically, the post-doctoral fellow to be hired will be developing models for high-power state-of-the-art devices and power amplifier design.
Scientific Area:
Wireless Communications
Wireless Circuits – Av
Admission Requirements:
The applicant should have a PhD on RF/Microwave Electronics in particular on power amplifier design and/or RF power device modeling. The candidates must hold a PhD degree for less than three years.
Work Objectives:
The objectives of the work are to develop models of GaN HEMT devices and their applications on RF power amplifier design for wireless communication applications.
Applicable legislation:
A fellowship will be celebrated according to the regulations defined by FCT, “Regulation of Instituto de Telecomunicações’ fellowships” and ” Estatuto do Bolseiro de Investigação”, according to Law no. 40/2004, dated August 18 (Status of Scientific Research Fellow), in its actual redaction, and also by Fundação para Ciência e Tecnologia, I.P. Fellowship Regulation of Fundação para Ciência e Tecnologia, I.P.
Place of work:
The work will be developed at the premises of Instituto de Telecomunicações at University of Aveiro, under the supervision of Prof. José Carlos Pedro.
6 months, with the possibility of renewal. Start date: December 2020 or soon thereafter.
Monthly salary:
1,616.00€ according to the table of grant amounts awarded directly by FCT for positions held in Portugal ( The payment will be made by bank transfer.
Selection criteria:
  • C1 (50%)
    The candidates will be evaluated according to the work they had done in their PhD Thesis as well as any experience they may add to their CV
  • C2 (20%)
    Practical experience and publications on device modeling and power amplifier design will be mostly appreciated
  • C3 (30%)

Each criteria, and the final classification F will be evaluated in a scale (0-20). The candidates will be ordered according to:
F = C1 x 50% + C2 x 20% + C3 x 30%
In case of a tie, the tied candidates will be ordered according to C1, then C2...
The Jury has the right to not admit any of the candidates that applied for this position whenever they consider that no candidate meets the minimum requirements for the position.
  • Prof. José Carlos Esteves Duarte Pedro, Universidade de Aveiro (President of the jury)
  • Prof. Luis Carlos Cotimos Nunes, Instituto de Telecomunicacoes Aveiro
  • Prof. Pedro Miguel da Silva Cabral, Universidade de Aveiro
Communication of the results:
Results will be published at the Instituto de Telecomunicações, in Aveiro. The selected candidate will be notified by email.
Required Documents:
Motivation letter explaining the interest in the position, Detailed Curriculum Vitae with transcripts and degree certificate. Apply online clicking on the “Apply Now” button in this form.
After the notification of the results, candidates have 10 working days, if they wish, to contest the decision.
E-mail submissions will not be considered. (The cover letter and the CV are mandatory documents in the online application platform)
IMPORTANTE NOTICE: IF the selected candidate has a degree obtained outside Portugal, his degree must be certified in Portugal
For more information:
Direcção Geral do Ensino Superior (DGES):

All the selection process is conducted through the IT web portal. No actions outside this platform are valid.
Application Period:
13-11-2020 to 27-11-2020
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