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Project: SUPERHARD IC - Silicon Carbide Used in Potentially disruptive Emerging RadiationHARDened Instrument Components

Acronym: SUPERHARD IC
Main Objective:
- To bring a radical new capability to the European space sector in the manufacture of
- To manufacture Silicon Carbide (SiC) bipolar components at the KTH Royal Institute of Technology, Sweden, which incorporate a unique radiation-hardening diamond
encapsulation and passivation, developed by the Instituto de Telecomunicações, Portugal.
Reference: N.A.
Funding: Swedish National Space Board
Start Date: 01-01-2017
End Date: 31-12-2020
Team: Joana Catarina Martins Mendes
Groups: Integrated Circuits – Av
Partners: KTH, Space Surrey Center
Local Coordinator: Joana Catarina Martins Mendes
Associated Publications