Acronym: SUPERHARD IC |
Main Objective: - To bring a radical new capability to the European space sector in the manufacture of - To manufacture Silicon Carbide (SiC) bipolar components at the KTH Royal Institute of Technology, Sweden, which incorporate a unique radiation-hardening diamond encapsulation and passivation, developed by the Instituto de Telecomunicações, Portugal. |
Reference: N.A. |
Funding: Swedish National Space Board |
Start Date: 01-01-2017 |
End Date: 31-12-2020 |
Team: Joana Catarina Martins Mendes |
Groups: Integrated Circuits – Av |
Partners: KTH, Space Surrey Center |
Local Coordinator: Joana Catarina Martins Mendes |
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Associated Publications
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