We report about the use of a printed pentafluorothiophenol layer on top of the dielectric surface as a passivation coating to improve the operational stability of all-ink-jet printed transistors. Transistors with bottom-gate structure were fabricated using cross-linked poly-4-vinylphenol (c-PVP) as dielectric layer and an ink formulation of an amorphous triarylamine polymer as semiconductor. The resulting TFTs had low turn-on voltage (Vth < |5 V|) and a mobility ≈0.1 cm2/(V s). A comparison of identically fabricated transistors shows that devices with coated dielectric have a higher operational stability than those using bare c-PVP. This conclusion is supported by a quantitative study of the threshold voltage shift with time under continuous operation. Long exposure to the ambient atmosphere causes an increase in the threshold voltage strongly dependent on the used semiconducting ink formulation.