The accuracy of high-frequency models of passive RF devices, e.g., inductors or transformers, presents one of the most challenging problems for RF integrated circuits. Accuracy limitations lead RF designers to time-consuming iterations with electromagnetic simulators. This paper will explore and compare two advanced modeling techniques. The first one is based on the segmented model approach, in which each device segment is characterized with a lumped element model. The second technique is based on the generation of surrogate models from the electromagnetic simulation of a set of device samples. Different modeling strategies (frequency separation, filtering according to self-resonance frequency, etc.) will be considered. Efficiency and accuracy of both, physical and surrogate, modeling techniques will be compared using a Si process technology.