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K band SiGe HBT single ended active inductors

Torres, J. ; Costa Freire, J.

Integration, The VLSI Journal Vol. 52, Nº 1-380, pp. 272 - 281, January, 2016.

ISSN (print): 0167-9260
ISSN (online): 0167-9260

Journal Impact Factor: 0,703 (in 2015)

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Abstract
The study of monolithic integration of active inductors (AI) on a 0.25um SiGe BiCMOS technology with 4 metal layers and HBTs with fT=120GHz is presented. Two topologies are presented and their performance discussed. Q values higher than 30 were obtained on a 3.4GHz bandwidth at 28GHz and maximum values as high as 100. Active inductors can be biased with low power, such as 2V with a nominal DC current of 0.6mA. The inductance value is controlled by external bias voltages and adjustments up to 40% were measured. Simple gyrators topologies with only 2 transistors are used for low power consumption and good performance at K Band is proved. The internal parameters of small signal model of HBT were studied and the crucial parameter to enhance the negative resistance and so the Q of the AI was identified.