Role of Hole Injection in Electroforming of LiF-Polymer Memory Diodes
Bory, B. F.
;
Gomes, H.L.
Journal of Physical Chemistry C Vol. 116, Nº 23, pp. 2443 - 12447, May, 2012.
ISSN (print): 1932-7447
ISSN (online): 1932-7455
Scimago Journal Ranking: 2,53 (in 2012)
Digital Object Identifier: 10.1021/jp302767y
Abstract
Al/LiF/poly(spirofluorene)/Ba/Al diodes submitted to bias voltages near 15 V undergo a change to a nonvolatile memory known as electroforming. Prior to electroforming, electron trapping occurs, followed by a tunneling current due to electrons from the polymer into LiF. At the onset voltage for electroforming, a sudden electroluminescence burst originating from electronic excitations in the polymer is detected. This confirms that hole injection into the polymer through LiF occurs leading to nonvolatile resistive switching.
